EUV reticle handling system and method

ABSTRACT

An enclosure for protecting at least a pattern side and an opposing side of a reticle is disclosed. The enclosure includes a first and second part that form an enclosure around a reticle to be protected during handling, inspection, storage, and transport. The enclosure in conjunction with a heater and heat sink provides thermophoretic protection of an enclosed reticle.

CROSS REFERENCE TO RELATED APPLICATIONS

Priority under 35 U.S.C. § 119 is claimed based on U.S. ProvisionalPatent Application No. 60/614,118, filed Sep. 28, 2004, the disclosureof which is expressly incorporated herein by reference.

BACKGROUND

1. Technical Field

Embodiments disclosed herein relate to an apparatus for and method ofhandling a reticle in a lithography system, such as an extremeultraviolet lithography (“EUVL”) system.

2. Related Art

The need for protection from particulate matter (i.e., dust, dirt, etc.)contaminating objects of interest is required in many fields ofapplication, including applications in semiconductor manufacturing suchas microlithography. As microprocessors become faster and more powerful,an ever increasing number of transistors are required to be positionedon a semiconductor chip. The increased transistor density necessitatescloser placement of the transistors, smaller device sizes, andinterconnects that take less space. An ever increasing accuracy andprecision in the methods for laying down the circuits on the chip istherefore required.

To achieve such great circuit density, the exposure radiationwavelengths used in microlithography are decreasing from visible to VUV,EUV, and smaller in next generation lithography (“NGL”) tools. A reticlewith a desired pattern on one side is illuminated by the radiation, andthe radiation transfers an image of the pattern to the substrate tocreate a part of the desired circuit.

Conventional reticles are typically for use with longer wavelengthexposure radiation. As a result, a clear faceplate, called a pellicle,can be utilized to cover and protect the pattern side of a reticle. Asthe features grow smaller, resulting in the need for shorterwavelengths, e.g. EUV radiation, the pellicle can not be utilized aspresent materials absorb too much of the radiation for processefficiency and deteriorate quickly. Moreover, the distortion of areticle has a greater impact on process yields with shorter wavelengthradiation, making the flatness of the reticle critical. Therefore,protecting both the pattern side and the side of the reticle used tomount it in a lithography system from contamination (and thus physicaldistortion) becomes important. Therefore, there is a need to providereticles and an apparatus for handling reticles to minimizecontamination and warping. This need exists throughout the reticlelifetime following final cleaning and inspection.

SUMMARY

As broadly described herein, embodiments according to the invention caninclude a reticle enclosure, a reticle, a thermophoretic protectionsystem, and an extreme ultra violet lithography system.

A reticle enclosure according to some embodiments of the invention caninclude a first part having a first contact surface and a second parthaving a second contact surface. The first and second part form anenclosed space between them to enclose a reticle when the first contactsurface is in contact with the second contact surface. At least one ofthe first and second parts also includes at least one support structureto position a reticle to be enclosed with a gap between the reticle tobe enclosed and the first and second part. The reticle enclosure canalso include a heater attached to one of the first and second parts andelectrically connected to electrical connections on the outside of theenclosure.

A reticle enclosure according to some embodiments of the invention caninclude a first part having a first contact surface and a second parthaving a second contact surface. The first and second part form anenclosed space between them to enclose a reticle when the first contactsurface is in contact with the second contact surface. At least one ofthe first and second part also includes at least one support structureto position a reticle to be enclosed with a gap between the reticle tobe enclosed and the first and second part. The reticle enclosure alsoincludes one or more optical fiber to direct homogenized light from alaser diode array onto a reticle enclosed with the space.

A reticle for use in a thermophoretic protection system according tosome embodiments of the invention has at least one side wall and aresistive heater attached to the at least one side wall. The reticlealso includes electrical contact points to allow electricity to powerthe resistive heater attached to the reticle.

A thermophoretic protection system for a reticle according to someembodiments of the invention can include a reticle to be protected bythermophoresis, a reticle enclosure having a first and second part, aheat sink for each of the first and second part to remove heat, at leastone heater to heat the reticle, and a gas between the reticle and theenclosure.

An EUV lithography tool according to some embodiments of the inventioncan include an exposure chamber, a reticle stage within the exposurechamber, a reticle library, and a reticle enclosure opening and closingstation within the exposure chamber. The reticle library includes atleast one heat sink having a variable cooling rate to remove heat fromat least one reticle enclosure and a supply of electrical powerconnectable to the at least one reticle enclosure.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory onlyand are not restrictive of the invention, as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate several embodiments according tosome embodiments of the invention and together with the description,serve to explain the principles of the invention. In the drawings,

FIG. 1 illustrates an extreme ultraviolet lithography (“EUVL”) systemneeding a particle contamination protection system for use in handlingreticles;

FIG. 2 is a flow chart of a process for manufacturing reticles;

FIG. 3 illustrates an exploded view of a reticle carrier, a “cleanfilter pod,” and a reticle according to some embodiments of theinvention;

FIG. 4 illustrates a top view of an exemplary EUVL system layout forhandling an EUVL reticle according to some embodiments of the invention;

FIG. 5 is a flow chart of an exemplary EUVL handling process of handlingan EUVL reticle within a lithography system according to someembodiments of the invention;

FIG. 6 illustrates a top perspective view of an embodiment of a cleanfilter pod according to some embodiments of the invention;

FIG. 7 illustrates an exploded perspective view of the clean filter podof FIG. 6 and an end effector for moving the clean filter pod;

FIG. 8 illustrates a bottom view of the clean filter pod of FIG. 6 andthe end effector of FIG. 7 supporting it;

FIG. 9 illustrates a side view of the clean filter pod and end effectorof FIG. 7 before passively opening the clean filter pod with an externalshelf;

FIG. 10 illustrates a side view of the clean filter pod, end effector,and external shelf of FIG. 9 after the end effector has lowered andpassively opened the clean filter pod;

FIG. 11 illustrates a side view of another embodiment of a clean filterpod according to some embodiments of the invention;

FIG. 12 illustrates a top perspective view of the clean filter pod shownin FIG. 11;

FIG. 13 illustrates a bottom perspective view of the clean filter podshown in FIG. 11;

FIG. 14 illustrates an enlarged detail view of the clean filter podshown in FIGS. 12 and 13 supported by an end effector before itpassively opens the clean filter pod with the external shelf;

FIG. 15 illustrates a perspective view of the components shown in FIG.14;

FIG. 16 illustrates a side view of another embodiment of a clean filterpod according to some embodiments of the invention;

FIG. 17 illustrates a detail of a hook and its location on a cleanfilter pod according to some embodiments of the invention;

FIG. 18 illustrates a detail of another hook and its location on a cleanfilter pod according to some embodiments of the invention;

FIG. 19 illustrates a side view of the clean filter pod shown in FIG. 16open and with a reticle supported by the bottom part;

FIG. 20 illustrates a side view of an embodiment of a bottom part of aclean filter pod according to some embodiments of the invention;

FIG. 21 illustrates a top perspective view of the bottom part shown inFIG. 20;

FIG. 22 illustrates a detail of a clean filter pod according to someembodiments of the invention showing an exemplary filter, reticlestandoff, sealing surfaces, and reticle and cover coatings;

FIG. 23 illustrates a clean filter pod according to some embodiments ofthe invention with an apparatus for transferring the clamping force fromthe reticle carrier (“RSP”) to both the clean filter pod and thereticle;

FIG. 24 illustrates a cross section, perspective view of a portion of aclean filter pod according to some embodiments of the inventionillustrating exemplary clean filter pod top and bottom constructions,reticle supports, and filters;

FIG. 25 illustrates a cross-section, perspective view of a portion of aclean filter pod according to some embodiments of the inventionillustrating an exemplary opening hook, filter, and clean filter pod topand bottom part construction;

FIG. 26 illustrates a cross sectional side view of a clean filter podaccording to some embodiments of the invention and an exemplaryapparatus for providing thermophoretic protection to the reticle withinthe clean filter pod;

FIG. 27 illustrates a cross sectional side view of a clean filter podaccording to some embodiments of the invention and another exemplaryapparatus for providing thermophoretic protection to the reticle withinthe clean filter pod;

FIG. 28 illustrates a perspective view of the underside of a cleanfilter pod top part according to some embodiments of the inventionillustrating a sealing surface, reticle clamping mechanism, clean filterpod top window and resistive heaters;

FIG. 29 illustrates a diagram of a reticle in a clean filter podaccording to some embodiments of the invention heated by an exemplarylaser diode system;

FIG. 30 illustrates cross sectional view of a reticle in a clean filterpod according to some embodiments of the invention protectedthermophoretically by an exemplary Peltier heat pump;

FIG. 31 illustrates a perspective view of a reticle and attached heatersfor providing thermophoretic protection in a clean filter pod accordingto some embodiments of the invention;

FIG. 32 illustrates a cross sectional side view of the reticle shown inFIG. 31;

FIG. 33 illustrates a top view of the reticle shown in FIG. 31;

FIG. 34 illustrates a detail of a CFP according to some embodiments ofthe invention including temperature sensors to measure the temperatureof the CFP and enclosed reticle;

FIG. 35 illustrates a side view diagram of a lithography systemaccording to some embodiments of the invention;

FIG. 36 illustrates a layout of a lithography system according to someembodiments of the invention;

FIG. 37 is a flow chart of a process of fabricating semiconductordevices;

FIG. 38 is a detailed flow chart of the above mentioned step 1004 of theprocess shown in FIG. 37.

DETAILED DESCRIPTION

Reference will now be made in detail to exemplary embodiments accordingto some embodiments of the invention, which are illustrated in theaccompanying drawings. Wherever possible, the same reference numberswill be used throughout the drawings to refer to the same or like parts.

Referring to wafer processing equipment, FIG. 1 illustrates a EUV (orsoft-X-ray “SXR”) lithographic exposure system 50. The depicted systemis configured to perform microlithographic exposures in a step-and-scanmanner. The depicted system is a projection-exposure system thatperforms step-and-scan lithographic exposures using light in the extremeultraviolet (“soft X-ray”) band, typically having a wavelength λ in therange of λ≈11−14 nm (nominally 13 nm). Lithographic exposure involvesdirecting an EUV illumination beam to a pattern-defining reticle 78. Theillumination beam reflects from reticle 78 while acquiring an aerialimage of the pattern portion defined in the illuminated portion ofreticle 78. The resulting “patterned beam” is directed to anexposure-sensitive substrate 80, on which a latent image of the patternis formed.

The EUV beam can be produced by a laser-plasma source 52 excited by alaser 54 situated at the most upper end of the depicted system 50. Laser54 generates laser light at a wavelength within the range ofnear-infrared to visible. For example, laser 54 can be a YAG or anexcimer laser. Laser light emitted from laser 54 is condensed by acondensing optical system 56 and directed to downstream laser-plasmasource 52.

A nozzle (not shown), disposed in laser-plasma light source 52,discharges xenon gas. As the xenon gas is discharged from the nozzle inlaser-plasma light source 52, the gas is irradiated by thehigh-intensity laser light from the condensing optical system 56. Theresulting intense irradiation of the xenon gas causes sufficient heatingof the gas to generate a plasma. Subsequent return of Xe molecules to alow-energy state results in the emission of SXR (EUV) radiation withgood efficiency having a wavelength of approximately 13 nm.

Since EUV light has low transmissivity in air, its propagation pathpreferably is enclosed in a vacuum environment produced in a vacuumchamber 58. Also, since debris tends to be produced in the environmentof the nozzle from which the xenon gas is discharged, vacuum chamber 58desirably is separate from other chambers of system 50.

A paraboloid mirror 60, provided with, for example, a surficialmulti-layer Mo/Si coating, is disposed relative to laser-plasma source52 so as to receive EUV light radiating from laser plasma source 52 andto reflect the EUV light in a downstream direction as a collimated beam62. The multi-layer film on parabolic mirror 60 is configured to havehigh reflectivity for EUV light of which λ≈13 nm.

Collimated beam 62 passes through a visible-light—blocking filter 64situated downstream of the parabolic mirror 60. By way of example,filter 64 can be made of zirconium (Zr), with a thickness of about 100nm. Of the EUV radiation 62 reflected by parabolic mirror 60, only thedesired 13 nm wavelength radiation passes through filter 64. Filter 64may be contained in a vacuum chamber 66 evacuated to high vacuum.

An exposure chamber 67 can be situated downstream of filter 64. Exposurechamber 67 contains an illumination-optical system 68 that comprises atleast a condenser-type mirror and a fly-eye-type mirror (not shown, butwell understood in the art). Illumination-optical system 68 also isconfigured to trim EUV beam 70 (propagating from filter 64) to have anarc-shaped transverse profile. Shaped “illumination beam” 72 isirradiated toward the left in FIG. 1 and is received by mirror 74.

Mirror 74 has a circular, concave reflective surface 74A and is held ina vertical orientation (in the figure) by holding members (not shown).Mirror 74 can be formed from a substrate made, e.g., of quartz orlow-thermal-expansion material such as Zerodur (Schott). Reflectivesurface 74A is shaped with extremely high accuracy and coated with aMo/Si multi-layer film that is highly reflective to EUV light. WheneverEUV light having a wavelength in the range of 10 to 15 nm is used, themulti-layer film on surface 74A can include a material such as ruthenium(Ru) or rhodium (Rh). Other candidate materials are silicon, beryllium(Be), and carbon tetraboride (B₄C).

A bending mirror 76 is disposed at an angle relative to mirror 74, andis shown to the right of mirror 74 in FIG. 1. Reflective reticle 78,that defines a pattern to be transferred lithographically to thesubstrate 80, is situated “above” bending mirror 76. Note that reticle78 is oriented horizontally with a reflective surface directed downwardto avoid deposition of any debris on the patterned surface of reticle78. Illumination beam 72 of EUV light emitted from illumination-opticalsystem 68 is reflected and focused by mirror 74 and reaches thereflective surface of reticle 78 via bending mirror 76.

Reticle 78 typically has an EUV-reflective surface configured as amulti-layer film. Pattern elements, corresponding to pattern elements tobe transferred to the substrate (or “wafer”) 80, are defined on or inthe EUV-reflective surface. Reticle 78 can be mounted via a reticlechuck 82 on a reticle stage 84 that is operable to hold and positionreticle 78 in at least the X- and Y-axis directions as required forproper alignment of reticle 78 relative to the substrate 80 for accurateexposure. Reticle stage 84 can, in some embodiments, be operable torotate reticle 78 as required about the Z-axis. The position of reticlestage 84 is detected interferometrically in a manner known in the art.Hence, illumination beam 72 reflected by bending mirror 76 is incidentat a desired location on the reflective surface of reticle 78.

A projection-optical system 86 and substrate 80 are disposed downstreamof reticle 78. Projection-optical system 86 can include severalEUV-reflective mirrors and blinds, shutters, or apertures. Patternedbeam 88 from reticle 78, carrying an aerial image of the illuminatedportion of reticle 78, can be “reduced” (demagnified) by a desiredfactor (e.g., ¼) by projection-optical system 86 and is focused on thesurface of substrate 80, thereby forming an image of the illuminatedportion of the pattern on substrate 80. So as to be imprinted with theimage carried by patterned beam 88, the upstream-facing surface of thesubstrate 80 can be coated with a suitable resist.

Substrate 80 may be mounted by electrostatic attraction or otherappropriate mounting force via a substrate “chuck” (not shown but wellunderstood in the art) to a substrate stage 90. Substrate stage 90 isconfigured to move the substrate chuck (with attached substrate) in theX-direction, Y-direction, and theta Z (rotation about the Z axis)direction relative to the projection-optical system 86, in addition tothe three vertical DOF as described in conjunction with the z actuatorsas described and claimed in U.S. Provisional Application No. 60/625,420,which is incorporated herein by reference in its entirety for allpurposes. Desirably, substrate stage 90 is mounted on and supported byvibration-attenuation devices. The position of the substrate stage 90 isdetected interferometrically, in a manner known in the art.

A pre-exhaust chamber 92 (load-lock chamber) is connected to exposurechamber 67 by a gate valve 94. A vacuum pump 96 is connected topre-exhaust chamber 92 and serves to form a vacuum environment insidepre-exhaust chamber 92.

During a lithographic exposure performed using the system shown in FIG.1, EUV light 72 is directed by illumination-optical system 68 onto aselected region of the reflective surface of reticle 78. As exposureprogresses, reticle 78 and substrate 80 are scanned synchronously (bytheir respective stages 84, 90) relative to projection-optical system 86at a specified velocity ratio determined by the demagnification ratio ofprojection-optical system 86. Normally, because not all of the patterndefined by reticle 78 can be transferred in one “shot,” successiveportions of the pattern, as defined on reticle 78, are transferred tocorresponding shot fields on substrate 80 in a step-and-scan manner. Byway of example, a 25 mm×25 mm square chip can be exposed on substrate 80with an IC pattern having a 0.07 μm line spacing at the resist onsubstrate 80.

Coordinated and controlled operation of system 50 is achieved using acontroller (not shown, but typically mounted below system 50 in the“sub-fab” area) coupled to various components of system 50 such asillumination-optical system 68, reticle stage 84, projection-opticalsystem 86, and substrate stage 90. For example, the controller operatesto optimize the exposure dose on substrate 80 based on control dataproduced and routed to the controller from the various components towhich the controller is connected, including various sensors anddetectors (not shown).

As substrate 80 is further processed, other desired patterns may need tobe transferred to it. In this case, reticle 78 may be removed and storedwithin lithography system 50 in a reticle (mask) library 98. Reticlelibrary 98 has supports 100 for multiple reticles 78 to be stored inclose proximity to reticle stage 84.

FIG. 2 is a block diagram of an exemplary manufacturing process 118 of areticle 78. In some embodiments, the reticle substrate, which may bemade of ULE™ or equivalent type of low-expansion glass is polished instep 120. The polished reticle substrate then has a multi layer coatingof Si, Mo, Ru, TaN, or Cr applied to it in step 122. The reticlesubstrate with multi-layer coating then is exposed to a writing patternin step 124. The reticle substrate is then front end processed in step126. The reticle is then inspected and repaired, if necessary andpossible, in step 128. Those reticles that pass step 128 are thencleaned in step 130. Reticle 78 then undergoes another inspection instep 132 before being shipped and stored for use in exemplarylithography system 50.

Protecting the patterns on reticle 78 is critical, because damage to thepattern, or the presence of particulate matter on the pattern side ofreticle 78 changes the pattern transferred to substrate 80, thereforecreating errors and lowering the yield of the process. In conventionallithography systems (those that use visible light or “G-Line” 436 nm,“I-Line” 365 nm, “KrF” 248 nm, “ArF” 193 nm), reticles 78 are protectedby a clear faceplate called a pellicle (which remains permanentlyattached to the reticle). Particles that fall on the pellicle areoutside of the depth of focus of the lithography system and do notinterfere with the imaging process. Moreover the pellicle can beperiodically cleaned without damaging the reticle.

However, in next generation lithography (NGL) systems, for example,extreme ultraviolet lithography (“EUVL”) systems such as that describedin FIG. 1, a pellicle cannot be used as it absorbs much of theillumination. The presence of particles on its backside can distort thepatterned surface of reticle 78 sufficiently to degrade the process.Therefore, extra care must be taken to ensure that particles to do notmigrate to reticle 78. Also in EUVL reticle 78 must be kept very flatwhen attached to reticle stage chuck 82. Therefore it is also importantto prevent relatively large particles, (e.g., 1 μm), or layers ofsmaller particles from migrating to the backside of reticle 78, which isits chucking surface.

A reticle handling system is used to transfer reticle 78 between reticlestage 84 and a reticle carrier (also called a reticle standardmanufacturing interface (“SMIF”) pod) or “RSP.” Reticle handling systemscan be designed to reduce reticle contamination during handlingprocesses. For example, a reticle handling system can be designed tominimize the number of contact events with reticle 78. Ideally, areticle handling system should not only protect reticle 78 fromparticles during handling, but should also handle reticle 78 in anefficient manner to improve system productivity. Ideally, a reticlehandling system should be as compact as possible to reduce a systemfootprint to reduce the cost of ownership for a customer.

It should also be noted that where conventional lithography could beachieved in an atmospheric environment, EUVL must be performed in avacuum environment to reduce optical beam absorption by ambient gases.Therefore, reticle 78 may be be handled in a vacuum environment andshould be transferred from its RSP (which is at an atmospheric pressure)to a vacuum pressure environment within the lithography tool. EUVLsystems therefore pose even greater challenges to minimizingcontamination of reticles.

Co-pending international application PCT/US2004/037542 discusses priorconcepts for protecting reticles in EUVL systems and is incorporatedherein by reference for all purposes. However, we have conceived ofimprovements to that and equivalent systems to provide a further layerof protection in case of accidental venting of the vacuum-environmentwhile reticle 78 is within the lithography tool and to provide onehousing that can protect reticle 78 during handling and duringinspection.

FIG. 3 illustrates the overall concept of the additional “layer” ofprotection. In conventional lithography systems a reticle and itsattached pellicle are transported from external environments into a loadlock where the reticle and pellicle are removed from the reticle carrierand transferred into the exposure chamber. In NGL systems, reticle 78may be enclosed within a clean filter pod (“CFP”) 150 while it is inexposure chamber 67 (see FIG. 1.). CFP 150 with reticle 78 enclosed maybe enclosed in Reticle Carrier 153, also known as a reticle standardmanufacturing interface (“SMIF”) pod, or “RSP” for transportationoutside of exposure chamber 67. CFP 150 includes a top part 152 and abottom part 151. RSP 153 includes a cover 157 and a base 155. CFP 150 issized to fit within RSP 153.

FIG. 4 illustrates a top view of an exemplary layout of stations withina lithographic system 159 according to some embodiments of theinvention. In some embodiments, an entry point to system 159 is a RSPpod load port 161. In some embodiments, adjacent to pod load port 161 isa pod library 163. In some embodiments, a pod robot 165 is adjacent topod library 163 and to a pod opener station 167. In some embodiments,also adjacent to pod opener station 167 is a reticle robot 169. In someembodiments, reticle robot 169 has access to both pod opener station 167and adjacent load lock 92. In some embodiments, on the opposite side ofload lock 92 is another reticle robot 171. In some embodiments,surrounding reticle robot 171 in a clockwise order are a reticle library98, a pre-aligner 173, and a reticle stage 84.

In some embodiments, in step 177, RSP 153 is received in RSP load port161. In some embodiments, RSP 153 is placed by RSP load port 161 intoRSP library 163 in step 179. In some embodiments, when a particularpattern on a reticle 78 is required, RSP pod robot 165 moves a RSP 153containing reticle 78 with the particular pattern to pod opener station167 in step 181 and opens RSP 153 allowing access to CFP 150 in step183. In some embodiments, after RSP 153 is opened, reticle robot 169moves CFP 150 from RSP base 155 in step 185 and places it in a load lock92 in step 187. In some embodiments, steps 177 through 187 may beconducted in atmospheric pressure. In some embodiments, in step 189,load lock 92 may also be sealed and evacuated by a vacuum pump to adesired vacuum pressure. In some embodiments where thermophoreticprotection may be contemplated within the exposure chamber, the desiredvacuum pressure is 50 millitorr, but an acceptable thermophoreticprotection pressure providing is 30 mtorr or greater. In someembodiments, after gate valve 94 opens, reticle robot 171 moves CFP 150from load lock 92 to reticle library 98 in step 191. In someembodiments, when the particular pattern on reticle 78 is needed,reticle robot 171 moves CFP 150 from reticle library 98 to pre-aligner173 in step 193. In some embodiments, after being pre-aligned, reticlerobot 171 moves CFP 150 to an external shelf (not shown here, butillustrated in FIGS. 7, 8, 14, and 15) to capture top part 152 andsemi-passively open CFP 150 in step 195. In some embodiments, bottompart 151 and reticle 78 are then moved to reticle stage 84 in step 196where reticle 78 is loaded into chuck 82 of reticle stage 84 in step197. In some embodiments, reticle 78 is then used to transfer apatterned EUV beam onto substrate 80 as discussed in conjunction withFIG. 1. In some embodiments, reticle 78 is then released from chuck 82in step 199. In some embodiments, reticle robot 171 returns reticle 78and bottom part 151 to external shelf in step 201 and semi-passivelycloses CFP 150 in step 203. In some embodiments, finally, CFP 150 withreticle 78 enclosed is returned to reticle library 98 in step 205. Ofcourse, the other steps may be reversed should the reticle need to beremoved from the lithography tool for inspection, long term storage,etc.

In some embodiments of a reticle handling system layout and process (notillustrated), RSP pod opener 167 may be combined with load lock 92,reducing the number of times reticle 78 is handled and the footprint ofsystem 159. With a combined RSP pod opener and load lock, a RSP would betransported from its entry point at RSP load port 161 to a pod library163 to the combined load lock/RSP opener, and CFP 150 would be removedfrom the RSP base 155 in the combined load lock/RSP opener station.

Other layouts may be envisioned, depending on what process conditionmust be optimized.

FIGS. 6 through 10 illustrate an embodiment of top part 152 and bottompart 151 of CFP 150 according to some embodiments of the invention. FIG.6 is a perspective view of CFP 150 in the “closed” position. In someembodiments, both top part 152 and bottom part 151 include three cutouts207 on all side edges. In some embodiments, the three cutouts are notsymmetrically placed on the side but are offset. This is done for easeof manufacture and assembly of CFPs. With offset cutouts, if the top andbottom parts are made the same, when assembled, the cutouts will neveralign.

FIG. 7 illustrates a CFP 150 as embodied in FIG. 6 in proximity to anend effector 209, which may be used to move CFP 150. As shown in FIG. 8,a bottom view of CFP 150 and end effector 209 illustrates that endeffector 209, in some embodiments, is no wider than the width of CFP 150and is designed to fit underneath and not on the sides of CFP 150. FIG.9 illustrates the beginning point for semi passively opening CFP 150with end effector 209 and an external shelf 211. In some embodiments,CFP 150, supported by end effector 209, has three vertical supports 213of external shelf 211 within cutouts 207 of bottom part 151. In someembodiments, the top surfaces of vertical supports 213 contact a bottomsurface of top part 152. In FIG. 10, end effector 209 has lowered bottompart 151, but top part 152 remains in the same location as in FIG. 9, asit is supported by vertical supports 213. In some embodiments, thus, CFP150 is semi-passively opened exposing reticle 78 as supported by bottompart 151.

FIGS. 11-15 illustrate a second embodiment of CFP 150 according to someembodiments of the invention. In some embodiments, top part 152 includesa larger top piece 215 and a frame 217. In some embodiments, larger toppiece 215, is a square of 215A length dimension, and a 215B thicknessdimension. Specifically, in some embodiments, larger top piece 215 is180 mm square by 5 mm thick. In some embodiments, bottom part 151 is asquare of 151A dimension and 151B thickness. Specifically, in someembodiments, bottom part 151 is 170 mm square by 5 mm thick. Frame 217,in some embodiments, has the same square dimension as bottom part 151.In some embodiments, the assembled CFP has an overall thicknessdimension of 150A. Specifically, in some embodiments, the overallthickness of CFP 150 is 20 mm providing vertical space around at leastone side of a reticle, which is typically 6.35 mm thick. FIG. 12 shows atop perspective view of this embodiment of CFP 150. FIG. 13 shows abottom perspective view of this embodiment of CFP 150.

FIGS. 14 and 15 illustrate a detail of the alignment of CFP 150 andanother embodiment of end effector 209 and external shelf 211. In someembodiments, CFP 150 is supported by a portion of end effector 209. Insome embodiments, end effector 209, in contrast to the embodiment shownin FIGS. 7-10, has a vertical portion that is designed to be near, butnot touching, the vertical sides of CFP 150. In some embodiments,external shelf 211 includes a horizontal piece 213 that functions as thevertical support for top part 152. In some embodiments, the top surfaceof vertical support 213 will come into contact with the bottom surfaceof the portion of larger top piece 215 that extends beyond the footprintof frame 217 and bottom part 151. In some embodiments, thus, when endeffector 209 lowers, top part 152 will rest on vertical supports 213 andbottom part 151 with reticle 78 will separate from top part 152, thus,passively opening CFP 150.

FIGS. 16-19 illustrate a third embodiment of CFP 150 according to someembodiments of the invention. FIG. 16 illustrates an embodiment of CFP150 with hooks 223 attached to top part 152. In some embodiments, hooks223 are L-shaped pieces with the opening facing in and no part extendingbeyond the foot print of top part 152. There may be any number of hooks,for example, three. Three hooks, located two on one side at or near thecorners, and one in the middle of the opposite side of CFP 150, provideextra stability to top part 152 when it is supported by correspondingvertical supports of external shelf 211.

FIGS. 17 and 18 illustrate two variations on locations and orientationsof hooks 223 as attached to top part 152. Hook 223 faces with theopening to the outside of CFP 150 in FIG. 17, but still within thefootprint of top part 152. Hook 223 faces with the opening to theoutside of CFP 150 in FIG. 18, but extends beyond the footprint of toppart 152.

FIG. 19 illustrates top part 152 as suspended by vertical supports ofexternal shelf 211 (not shown) after end effector 209 (not shown) lowersbottom part 151 with reticle 78. In FIG. 19, reticle 78 is illustratedlocated with bumpers 219 and standoffs 221 (not shown, but behindbumpers 219). For opening CFP 150, the above mentioned embodiment usesend effector 209 but other mechanical contact can also be used insteadof end-effector 290. For example, hook 223 or some similar mechanicalstructure can be positioned in a pre-alignment stage, reticle libraryand so on, and at these locations CFP 150 may be opened.

In some embodiments, including all three, above-described embodiments ofCFP 150, top part 152 and bottom part 151 may each contain at least aportion through which radiation of a range of wavelengths may passthrough to accommodate inspection and measurement of aspects of reticle78 while it is stored in CFP 150. These include visual inspection,inspection processes using DUV, and on the other end, measurements usinginfra red (“IR”) wavelengths. A material meeting such requirements isquartz. The portion of top part 152 or bottom part 151 comprising suchmaterial may vary in dimensions, depending on how much of reticle 78 isdesired to be inspected or measured while it is within CFP 150.

FIGS. 20 and 21 illustrate further detail on components of bottom part151. In some embodiments, bottom part 151 generally locates reticle 78using bumpers 219 and supports reticle 78 using standoffs 221. In someembodiments, bumper 219 stands above the top surface of bottom part 151a dimension 219A. Specifically, in some embodiments, bumper 219 standsabout 4 mm above the top surface of bottom part 151. Standoff 221 standsa dimension 221A from the top surface of bottom part 151. Specifically,in some embodiments, standoff 221 is about 2 mm above the top surface ofbottom part 151. FIG. 21 illustrates the location of eight bumpers 219and three standoffs 221. In some embodiments, two bumpers 219 arelocated at each corner and define a space between them in which a cornerof reticle 78 will fit. In some embodiments, reticle 78 will not contactbumpers 219 unless abnormal handing (an error) occurs. In someembodiments, bumpers 219 may prevent reticle 78 from sliding off ofbottom part 151. In some embodiments, bumper 219 may be cylindrical witha flat surface, or a conical or spherical top to assist in locating thecorners of reticle 78 when reticle 78 is lowered onto bottom part 151.In some embodiments, reticle 78 is supported in a plane defined by thesethree standoffs 221. In some embodiments, standoffs 221 may have flat,conical, or spherical tops.

FIG. 22 illustrates a CFP 150 according to the first embodimentincluding filter ports 225 and connecting pathways 227 that allow gasflow in the direction of the black arrows to equalize the pressurebetween the space enclosed by top part 152 and bottom part 151 of CFP150 and the external environment. Filter ports 225 may be constructed,by way of non-limiting example, of magnetized sintered nickel,electrostatic polypropylene, such as in the G-200 Filtrete™ filtermanufactured by 3M, and polycarbonate track etch filters, such as theSPI-Pore™ Filters manufactured by Structure Probe, Inc. In someembodiments, and under some situations, filter ports 225 can providefiltration down to about 30 nm minimal dimensioned particles. In someembodiments, and under some situations, filter ports 225 can providefiltration of down to about 3 nm minimal dimensioned particles. In someembodiments, the surface of top part 152 that contacts the surface ofbottom part 151 has a sealing surface 229. The mating surface of bottompart 151 may have a corresponding sealing surface 229. In someembodiments, sealing surfaces 229 are made of magnetized nickel. Thesesurfaces 229 not only attract each other, but also magnetized particlescreated from contact as described in co-pending U.S. patent applicationSer. No. 10/956,606 entitled, Contact Material and System ForUltra-Clean Applications. In some embodiments, a fluouroelastomer, suchas sold by Dupont-Dow under the trademark VITON, may also be used.

The top surface of reticle 78 as it is disposed in FIG. 22 is the sidethat contacts chuck 82 of reticle stage 84, and is also known as thebackside of reticle 78. In some embodiments, where the backside ofreticle 78 is designed to come in contact with top part 152, it has acoating 231. In some embodiments, coating 231 is magnetized nickel. Thebottom surface of reticle 78, as it is disposed in FIG. 22, is the sidethat holds the pattern that will reflect the EUV beam, and is also knownas the frontside of reticle 78. In some embodiments, where the frontsideof reticle 78 is designed to come in contact with standoff 221, it has acoating 233.

Also depicted in FIG. 22 is standoff 221. In some embodiments, standoff221 is constructed of magnetized nickel. In some embodiments, standoff221 is constructed of a fluouroelastomer, such as sold by Dupont-Dowunder the trademark VITON, may also be used. In some embodiments coating233 may be magnetized nickel, too, or a material that is harder thanmagnetized nickel and therefore less likely to particulate. An exampleof such a material is annealed MoSi Multi-layer. Annealing or heatingthe MoSi multilayer locally with a laser turns the multilayer intomolybdenum silicide which is a hard material—harder than nickel. Anothermaterial harder than nickel that can be used to coat the front andbackside areas (especially the areas that come into contact withportions of CFP 150) is Chromium.

In some embodiments, the inner surfaces of top part 152 and bottom part151 are coated with a conductive, IR transmissive, optically clearcoating 235. In some embodiments, coating 235 can be Indium Tin Oxide,ITO.

FIG. 23 illustrates a detail of a CFP 150 according to some embodimentsof the invention. CFP 150 is illustrated, in some embodiments, insideRSP 153. RSP cover 157 and RSP base 155 may be seen. Bottom part 151 ofCFP 150 rests either directly on RSP base 155 or indirectly on supportsprotruding from RSP base 155 (as can be seen in FIG. 3). Reticle 78 mayrest on standoffs 221 as previously described and is generally preventedfrom significant horizontal motion by bumpers 219 as previouslydescribed. RSP cover 157 exerts a force, typically, by a spring 237, ontop part 152. In FIG. 23 this force is illustrated by a large arrowbelow spring 237. CFP 150, in some embodiments, also has an apparatusfor transferring the clamping force exerted by spring 237 directly onreticle 78, without breaking the seal around reticle 78. In someembodiments, this force is transferred through a bellows 239. In FIG.23, this force is illustrated by a large arrow below spring 237 andabove belows 239. In some embodiments, bellows 239 is made of magnetizednickel or stainless steel. In some embodiments, bellows 239 may be madeof material that does not particulate when flexed. More than one bellows239 may be utilized to optimize reticle stabilization during expectedforces during shipping and other transportation with RSP 153. The use ofthree bellows 239, located opposite standoffs 221, may providesufficient restraining forces. The sum of downward forces applied bysprings 237 is opposed by a force from RSP base 155. In FIG. 23, thisequal and opposite force on CFP bottom part 151 is illustrated by thelarge arrow pointing upward.

FIG. 24 illustrates a detail of a CFP according to some embodiments ofthe invention. CFP 150 can include a bellows 239 mounted in top part152, specifically between top frame 241 and top cover 243. In someembodiments, bellows 239 contacts coating 231 on reticle 78. In someembodiments, the portion of bellows 239 that contacts reticle 78 may beconstructed of a fluouroelastomer, such as sold by Dupont-Dow under thetrademark VITON. In some embodiments, CFP 150 also includes filter 225mounted within top frame 241. In some embodiments, CFP 150 also includesstandoff 221 mounted in bottom part, specifically bottom frame 245 andadjacent to bottom cover 247. In some embodiments, standoff 221 contactscoating 233 (not shown) on reticle 78. Top frame 241 and bottom frame245, in some embodiments, may be constructed from aluminum. Top cover243 and bottom cover 247, in some embodiments, may be constructed fromoptically clear material, such as, for example, quartz. The aboveembodiment uses CFP 150 for protecting reticle 78 from contamination orparticulate matter but other protection devices can be used. Forexample, only the protection cover positioned to cover the patternedsurface of reticle 78, which is the bottom surface of reticle 78 in FIG.22, can be used. Such a reticle protection cover is shown in U.S. PatentPublication No. US-2003/0218728 and is explicitly incorporated herein byreference for all purposes. Furthermore, the above embodiment securesreticle 78 and reticle protection member or CFP 150 in RSP (Reticle SMIFPod). However, the load-lock can also have similar securing means andcan secure reticle 78 and the reticle protection member (CFP 150 orreticle cover), during an evacuation and pumping procedure. During theseprocesses, the position of reticle 78 or protection member 150 tends tochange.

FIG. 25 illustrates a detail of a CFP according to some embodiments ofthe invention. In some embodiments, CFP 150 includes a hook 223 mountedto top part 152, specifically to frame 241. In some embodiments, topcover 243 can be captured by frame 241 and the base of hook 223. In someembodiments, CFP 150 can include filter 225 mounted in frame 241. Insome embodiments, bottom part 151 can include bottom frame 245 andbottom cover 247.

FIG. 26 illustrates a portion of a thermophoresis protection system 248according to some embodiments of the invention for reticle 78 in a CFP150 according to some embodiments of the invention. For discussion ofthermophoresis see U.S. Pat. No. 6,110,844 to Rader et al., col. 1, line65—col. 2, line 11, and U.S. Pat. No. 6,253,464 B1 to Klebenoff et al.at col. 2, lines 33-67 and col. 3, line 65 to col. 4, line 47, whichtext is incorporated herein by reference for all purposes. In someembodiments, top part 152 and bottom part 151 can each include a window.In some embodiments the window may be constructed of quartz, or fusedsilica. In some embodiments, the material for the window will haveapproximately the same coefficient of expansion as the selected framematerial In some embodiments, the material will be inert and not outgasany hydrocarbons or water.

In some embodiments, a temperature control unit 249 can be in contactwith each of top part 152 and bottom part 151. In some embodiments,temperature control unit 259 includes a housing 251, a radiative heater253, and a liquid cooled quartz window 257. Housing 251 and liquidcooled quartz window 257 may form a space 255, which may be evacuated toavoid conductive and convective heat transfer from radiative heater 253to liquid cooled window 257. System 248 provides thermophoreticprotection for reticle 78 from particles in CFP 150 if radiative heater253 transfers enough heat to reticle 78, and liquid cooled window 257removes enough heat from top part 152 or bottom part 151 to keep reticle78 at a higher temperature than top part 152 and bottom part 151. When atemperature difference exists, a temperature gradient will form in thegas surrounding reticle 78 that creates a force on particles from warmertemperatures to cooler temperatures and, therefore, away from reticle78. Temperature differences as small as a few degrees can providesignificant thermophoretic protection.

FIG. 27 illustrates a thermophoresis protection system 258 according tosome embodiments of the invention for reticle 78. Top part 152 andbottom part 151 each are in contact with a heat sink, or in other words,an outside cooling source 259 that removes heat from the system,specifically, from top part 152 and bottom part 151. CFP 150 includes aheating element 261 mounted to either top part 152 or bottom part 151.In some embodiments, heating element 261 is mounted to bottom part 151.In some embodiments, insulation may be used between heating element 261and CFP 150 to reduce heat transfer from heater 261 to CFP 150. In someembodiments, heating element 261 is connected to an external powersupply and ohm meter 263. Heating element 261 may also be used as atemperature sensor by measuring the electrical resistance of heatingelement 261. Since the resistance changes as a function of temperature,a measurement of the resistance would indicate the temperature ofelement 261, from which the edge temperature of reticle 78 could becalibrated. Electrical contacts may be located on top part 152 andbottom part 151 for conducting electrical power to heating elements 261.

System 258 provides thermophoretic protection for reticle 78 fromparticles in CFP 150 if heating element 261 transfers enough heat toreticle 78, and heat sink 259 removes enough heat from top part 152 orbottom part 151 to keep reticle 78 at a higher temperature than top part152 and bottom part 151. Heat sink 259 could be a fluid (gas or liquid)or a solid. When a temperature difference exists, a temperature gradientwill form in the gas surrounding reticle 78 that creates a force onparticles from warmer temperatures to cooler temperatures and,therefore, away from reticle 78. This embodiment would allow fornon-uniform heat transfer to the edge of reticle 78 to minimize thetemperature variation within reticle 78. Uniform heat transfer to theentire perimeter of reticle 78 creates corners with higher temperaturesand, therefore, more variation. Reduced temperature variation producesless reticle distortion, which is desirable.

FIG. 28 is a detail of a portion of a CFP according to some embodimentsof the invention. A corner of top part 152 is illustrated from thebottom. In some embodiments, sealing material 229 on the surface offrame 241 contacts the mating material in bottom part 151. In FIG. 28, abellows 239 is disposed in a corner of frame 241. Top cover 243 is alsodepicted. Heating element 261 and heating support (insulation) 265 asattached to frame 241 are also depicted. Note that they do not extendall the way to the corner. Frame 241 may be an aluminum frame. Aspreviously described, cover 243 may be constructed of quartz. In someembodiments, sealing material 229 is magnetized nickel. In someembodiments, bellows 239 is includes magnetized nickel. In someembodiments, filter 225 may be disposed in a frame opposite heatingelement 261. When heating element 261 is between filter 225 and reticle78, particles that do enter CFP 150 through filter 225 are driventhermophoretically away from reticle 78.

FIG. 29 illustrates another heating system for use within athermophoretic protection system. In some embodiments, system 268includes laser diode array 269, connected to a homogenizer 271. In someembodiments, homogenizer 271 can be connected to multiple fibers 273that are connected to the outside of CFP 150. In some embodiments, CFP150 would have mating optical fibers to shine light through CFP 150 andon to the edges of reticle 78. The light is absorbed by the reticle,which is thereby heated. If the reticle absorbs much of the light,relatively little incidental heating of the CFP 150 results. Note thatless light may be absorbed if reticle 78 has electrically conductivefilm on its edges. However, such a film could be accounted for if theabsorption spectrum was known.

FIG. 30 illustrates yet another heating system for use within athermophoretic protection system. In some embodiments, system 274includes thermoelectric chips (TECs) 275 mounted on at least one side oftop part 152. TECs, also known as Peltier heat pumps, can transfer heatfrom top part 152 to reticle 78. In some embodiments, an electricalpower could be supplied through top part 152 from electrical supply 227to TEC 275. Of course, such a system could be used in conjunction with aheat sink to remove heat from the largest outer surfaces of top part 152and bottom part 151. This embodiment does not require insulation betweenTEC 275 and CFP 150. It also more efficient and requires reticle 78 toobtain a lower approximate (recognizing reticle 78 may not have auniform temperature) temperature relative to ambient or systemtemperature to provide a temperature gradient in the gas surroundingreticle 78 inside CFP 150. In some embodiments, TEC 275 may also be incontact with an edge of reticle 78 for conductive heat transfer toreticle 78.

FIGS. 31-33 illustrate yet another heating system for use within athermophoretic protection system. In some embodiments, resistive heaters279 are attached directly to reticle 78. In some embodiments, electricalcontacts 281 may be connected to heaters 279 and disposed on the frontor backside of reticle 78. In some embodiments, electrical contacts maybe disposed on sides of reticles 78. In some embodiments, electricalcontacts are coincident with supporting and restraining contact points,i.e., from bellows 239 or standoff 221. In FIG. 32 (cross section),reticle 78 is depicted with side heaters 279 and surrounded by gas,which is necessary at some pressure to provide a thermophoretic effectbetween reticle 78 and top part 152 or bottom part 151. In someembodiments and depicted in FIG. 33, heaters 279 are disposed on allfour vertical sides of reticle 78. However, in some embodiments, heaters279 do not extend the entire length of any side, but cover approximately80% of the side dimension. Such a non-uniform heating arrangement mayreduce the temperature variation of reticle 78, which helps to reducethermal distortion of reticle 78 and reduce the time required forreticle 78 to reach an acceptable temperature and level of distortionbefore reticle 78 is attached to stage 84. Moreover, the direct contactheats reticle 78 more efficiently in low vacuum pressure environmentswhere conductive heat transfer in the gas between resistive heatingelements 261 and reticle 78 is relatively inefficient.

As indicated in the table below, attaching a heater directly to reticle78 is advantageous because less power is required to maintain theminimum temperature difference between reticle 78 and CFP 150. Moreover,the approximate temperature of reticle 78 is lower, thus there is asmaller risk of damaging reticle 78 multi-layer (pattern), and less timeis required to reach ambient or system temperature before chuckingreticle 78 to stage 84.

Min. Temp. Diff. between Reticle Approximate Heater Heater Power andReticle attached Pressure Temp Input CFP Temperature Analysis to (Pa) (°C.) (Watts) (° C.) (° C.) 1 reticle 7 26 0.3 1 25 2 reticle 101000 393.2 1 30 3 CFP 7 88 8.2 1 65 4 CFP 101000 84 15.0 1 50

FIG. 34 shows a detail of a CFP according to some embodiments of theinvention. In some embodiments, CFP 150 may include sensors to measurethe temperature of the top and bottom surface of reticle 78. In someembodiments, CFP 150 may include sensors to measure the temperature oftop part 152 and bottom part 151. Specifically, in some embodiments, andas depicted in FIG. 34, CFP 150 may include a combination sensor 285disposed in top cover 243 and a combination sensor 285 disposed inbottom cover 247. Combination sensor 285 may include a thermistor tomeasure the temperature of the surrounding material in which it islocated and an IR sensor to measure the temperature of a surface infront of it. Thus, as depicted in FIG. 34, sensor 285 can measure thetemperature of top cover 243 and the temperature of the backside ofreticle 78. Or, for sensor 285 disposed in bottom cover 247, sensor 285can measure the temperature of bottom cover 287 and the temperature ofthe frontside of reticle 78. When connected to data acquisitionsoftware, these sensors can provide feedback for controlling the heatinput through the selected heating system and the heat output throughthe selected heat sink. Temperature sensors 285 are well known in theart and need not be described in further detail. An example oftemperature sensor 285 is produced by General Electric, located in theU.S.

A thermophoretic protection apparatus may be used in at least the loadlock, the reticle library, and the pre-aligner. The reticle temperaturemay be controlled such that a thermophoretic effect continues during thetransfer periods where it is more difficult to provide electrical powerthrough the robots to the electrical contact on the CFP to power theheaters on either the CFP or reticle. The reticle temperature however,should not be significantly higher than ambient, because if portions ofthe reticle cool significantly in the reticle stage chuck, the reticlemay distort and create errors in the transferred pattern. In someembodiments, a 0.5° C. temperature difference between the reticle andambient temperature is envisioned to minimize reticle temperaturedifferential effects when chucked.

A lithographic exposure system with which any of the foregoingembodiments of clean filter pods can be used is shown schematically inFIG. 35. Any clean filter pod as described above can be used, with anycombination of the various features discussed (sealing materials,standoffs, horizontal motion restraints, clamping forces, heaters andcooling sources, design of CFP structure, material selection forwindows.

Thus, for example, the reticle library may have electrical powerconnections and heat sinks built into supports 100 (see FIG. 1). Asdepicted in FIG. 35, reticle library 98 includes support 100 to supportat least CFP 150. In some embodiments, reticle library 98 may alsoinclude one or more heat sinks 290. In some embodiments, heat sinks 290may be like heat sinks 257 or 259 as previously described. In someembodiments, reticle library 98 may also a data acquisition system 293to acquire temperature data from temperature sensor 285. In someembodiments, temperature data may be used by a controller 295 toregulate power from power supply 297 connected through electricalcontacts 299 to a heater within CFP (whether attached to CFP 150 orreticle 78 or both). Electrical power connections may contact electricalcontacts on CFP 150 and conduct electrical power to a heating system,whether attached to CFP 150 or reticle 78. In some embodiments,controller 295 may also use temperature data from temperature sensors285 to control the cooling rates of heat sink 290. In some embodiments,control of the heating and cooling will control the temperature gradientpresent in the gas between a reticle surface and a CFP internal surface.

Other components or stations of a lithography system according to someembodiments of the invention may also have such above describedcomponents. FIG. 36 illustrates pre-aligner 173, load lock 92, inaddition to reticle library 98 having at least one or more heat sinks290 and electrical power supply 295 and associated electrical contacts297.

Many of the components and their interrelationships in this system areknown in the art, and hence are not described in detail herein.

As described above, a photolithography system according to the abovedescribed embodiments can be built by assembling various subsystems,including each element listed in the appended claims, in such a mannerthat prescribed mechanical accuracy, electrical accuracy and opticalaccuracy are maintained. In order to maintain the various accuracies,prior to and following assembly, every optical system is adjusted toachieve its optical accuracy. Similarly, every mechanical system andevery electrical system are adjusted to achieve their respectivemechanical and electrical accuracies. The process of assembling eachsubsystem into a photolithography system includes mechanical interfaces,electrical circuit wiring connections and air pressure plumbingconnections between each subsystem. Needless to say, there is also aprocess where each subsystem is assembled prior to assembling aphotolithography system from the various subsystems. Once aphotolithography system is assembled using the various subsystems, totaladjustment is performed to make sure that every accuracy is maintainedin the complete photolithography system. Additionally, it is desirableto manufacture an exposure system in a clean room where the temperatureand humidity are controlled.

Further, semiconductor devices can be fabricated using the abovedescribed systems, by process 1000 shown generally in FIG. 37. In step1001 the device's function and performance characteristics are designed.Next, in step 1002, a mask (reticle) having a pattern designed accordingto the previous designing step, and is manufactured, including theexemplary method described in conjunction with FIG. 2. hereinabove. In aparallel step 1003, a wafer is made from a silicon material. The maskpattern designed in step 1002 is exposed onto the wafer from step 1003in step 1004 by a photolithography system described hereinaboveaccording to the principles of the present invention. In step 1005 thesemiconductor device is assembled (including the dicing process, bondingprocess and packaging process), then finally the device is inspected instep 1006.

FIG. 38 illustrates a detailed flowchart example of the above-mentionedstep 1004 in the case of fabricating semiconductor devices. In step 1011(oxidation step), the wafer surface is oxidized. In step 1012 (CVDstep), an insulation film is formed on the wafer surface. In step 1013(electrode formation step), electrodes are formed on the wafer by vapordeposition. In step 1014 (ion implantation step), ions are implanted inthe wafer. The above mentioned steps 1011-1014 form the preprocessingsteps for wafers during wafer processing, and selection is made at eachstep according to processing requirements.

At each stage of wafer processing, when the above-mentionedpreprocessing steps have been completed, the following post-processingsteps are implemented. During post-processing, initially, in step 1015(photoresist formation step), photoresist is applied to a wafer. Next,in step 1016, (exposure step), the above-mentioned exposure device isused to transfer the circuit pattern of a mask (reticle) to a wafer.Then, in step 1017 (developing step), the exposed wafer is developed,and in step 1018 (etching step), parts other than residual photoresist(exposed material surface) are removed by etching. In step 1019(photoresist removal step), unnecessary photoresist remaining afteretching is removed.

Multiple circuit patterns are formed by repetition of thesepreprocessing and post-processing steps.

Other embodiments according to some embodiments of the invention will beapparent to those skilled in the art from consideration of thespecification and practice of the invention disclosed herein. It isintended that the specification and examples be considered as exemplaryonly, with a true scope and spirit of the invention being indicated bythe following claims.

1. A reticle enclosure comprising: a first part comprising a firstcontact surface; a second part comprising a second contact surface; anda heater attached to a first side of the first part and electricallyconnected to electrical connections on a second side of the first part;wherein the first part and the second part form an enclosed spacebetween them to enclose a reticle when the first contact surface is incontact with the second contact surface; wherein the first part furthercomprises at least one support structure to position the reticle to beenclosed with a gap between the reticle to be enclosed, the first part,and the second part; and wherein the heater is within the enclosed spaceand the electrical connections are outside of the enclosure.
 2. Thereticle enclosure of claim 1, wherein the heater is a thermoelectricchip to pump heat from the part to which it is attached to the reticleto be enclosed.
 3. The reticle enclosure of claim 1, wherein the heateris a resistive heater to heat the reticle to be enclosed.
 4. The reticleenclosure of claim 2, wherein the heater is positioned near at least oneedge of the reticle to be enclosed.
 5. The reticle enclosure of claim 1,further comprising: a filter to allow gas pressure to equalize betweenthe enclosed space and an external environment, but not pass particleswith a minimum dimension of 30 nm.
 6. The reticle enclosure of claim 5,wherein the filter comprises sintered nickel.
 7. The reticle enclosureof claim 1, wherein at least one of the first part or the second partfurther comprises a sealing material on its respective contact surface.8. The reticle enclosure of claim 7, wherein the sealing material ismagnetized nickel.
 9. The reticle enclosure of claim 7, wherein thesealing material is a fluorelastomer.
 10. The reticle enclosure of claim1, wherein the first part further comprises a first temperature sensorto sense the temperature of the first part, and a second temperaturesensor to sense the temperature of a first side of the reticle to beenclosed within the space, and wherein the second part further comprisesa third temperature sensor to sense the temperature of the second part,and a fourth temperature sensor to sense the temperature of a secondside of the reticle to be enclosed within the space.
 11. The reticleenclosure of claim 1, further comprising at least one restrainingstructure to restrain the reticle to be enclosed within the space. 12.The reticle enclosure of claim 11, wherein the at least one restrainingstructure is a metal bellows.
 13. The reticle enclosure of claim 12,wherein the metal is selected from a group consisting of magnetizednickel and stainless steel.
 14. The reticle enclosure of claim 1,wherein at least one of the first part or the second part comprises aportion transmissive to at least visible light.
 15. The reticleenclosure of claim 1, wherein at least one of the first part or thesecond part comprises an optically clear portion through which one ofthe two largest faces of the reticle to be enclosed within the space maybe viewed.
 16. A system for thermophoretically protecting a reticle,comprising: a reticle to be protected by thermophoresis; a reticleenclosure comprising a first part and a second part; a heat sink forremoving heat from the first part and the second part; and a heater onthe first part to heat the reticle.
 17. A reticle enclosure comprising:a first part comprising a first contact surface and at least one supportstructure; a second part comprising a second contact surface; and aheater attached to a first side of the second part and electricallyconnected to electrical connections on a second side of the second part,wherein the first part and the second part form an enclosed spacebetween them to enclose a reticle when the first contact surface is incontact with the second contact surface, wherein the at least onesupport structure positions the reticle to be enclosed with a gapbetween the reticle to be enclosed, the first part, and the second part,and wherein the heater is within the enclosed space and the electricalconnections are outside of the enclosed space.
 18. The reticle enclosureof claim 17, wherein the heater is positioned near at least one edge ofthe reticle to be enclosed.
 19. A system for thermophoreticallyprotecting a reticle comprising: a reticle to be protected bythermophoresis; a reticle enclosure comprising a first part and a secondpart; a heat sink for removing heat from the first part and the secondpart; and a heater attached to the reticle.
 20. A system forthermophoretically protecting a reticle comprising: a reticle to beprotected by thermophoresis; a reticle enclosure comprising a first partand a second part; a heat sink for removing heat from the first part andthe second part; and a heater outside of the reticle enclosure to heatthe reticle.